Dissociation of N2 on a Si(111)-7x7 Surface at Room Temperature
Résumé
We demonstrate that the strong N2 bond can be efficiently
dissociated at low pressure and ambient temperature on a
Si(111)-7x7 surface. The reaction was experimentally investigated
by scanning tunnelling microscopy and X-ray photoemission
spectroscopy. Experimental and density functional theory results
suggest that relatively low thermal energy collision of N2 with the
surface can facilitate electron transfer from the Si(111)-7x7
surface to the π*-antibonding orbitals of N2 that significantly
weaken the N2 bond. This activated N2 triple bond dissociation on
the surface leads to the formation of a Si3N interface.
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